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All-Chemically Deposited Solar Cells with Antimony Sulfide-Selenide/Lead Sulfide Thin Film Absorbers

Published online by Cambridge University Press:  01 February 2011

Sarah Messina
Affiliation:
srmf@cie.unam.mx, Universidad Nacional Autónoma de México, Centro de Investigación en Energía, Av. Xochicalco S/N, Temixco, Morelos,, 62580, Mexico
M.T.S. Nair
Affiliation:
mtsn@cie.unam.mx, Universidad Nacional Autónoma de México, Centro de Investigación en Energía, Av. Xochicalco S/N, Temixco, Morelos,, 62580, Mexico
P. K. Nair
Affiliation:
pkn@cie.unam.mx, Universidad Nacional Autonoma de Mexico, Centro de Investigacion en Energia, Av. Xochicalco S/N, Temixco, Morelos, 62580, Mexico, 5556229732, 5556229742
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Abstract

Solar cell structures with Sb2SxSe3-x and PbS as absorber layers were fabricated by chemical deposition on commercial transparent conductive oxide coated glass. The solid solution here was prepared by heating at 250°C a Sb2S3 thin film in contact with a chemically deposited Se-thin film. It has a graded band gap of 1-1.8 eV. A PbS thin film deposited on this layer basically fulfils the role of a p+ layer; its role as an absorber is yet to be studied. Open circuit voltage of 560 mV and short circuit current density ¡Ö 1mA/cm2under 1-3 kW/m2 tungsten halogen radiation are characteristics of these cells. Optimization of the film thicknesses and heating may offer prospects for these materials toward alternate thin film solar cell technology.

Type
Research Article
Copyright
Copyright © Materials Research Society 2007

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