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Growth of GaAs Epitaxial Microcrystals on a S-Terminated GaAs (001) by Vls Mechanism in MBE

Published online by Cambridge University Press:  28 February 2011

Nobuyuki Koguchi ,
Keiko Ishige  and
Satoshi Takahashi
Nobuyuki Koguchi
Affiliation:
National Research Institute for Metals, Tsukuba Laboratories, 1–2–1 Sengen, Tsukuba, Ibaraki 305, Japan
Keiko Ishige
Affiliation:
National Research Institute for Metals, Tsukuba Laboratories, 1–2–1 Sengen, Tsukuba, Ibaraki 305, Japan
Satoshi Takahashi
Affiliation:
National Research Institute for Metals, Tsukuba Laboratories, 1–2–1 Sengen, Tsukuba, Ibaraki 305, Japan
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Abstract

Numerous GaAs epitaxial microcrystals having nearly equal size were fabricated on a S-terminated GaAs(001) surface by a sequential supply of Ga and As molecular beams. The GaAs(001) surface was terminated by sulfur atom in the MBE chamber. The growth of GaAs epitaxial microcrystals is caused by a Vapour-Liquid-Solid(VLS) mechanism. GaAs epitaxial microcrystals were also fabricated on a S-terminated GaAlAs(001) surface by the same procedure.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 283: Symposium F – Microcrystalline Semiconductors–Materials Science and Devices , 1992 , 815
Copyright
Copyright © Materials Research Society 1993

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References

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