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Determination of the Optical & Materials Properties of βFeSi2 Layers Fabricated Using Ion Beam Synthesis

Published online by Cambridge University Press:  25 February 2011

T. D. Hunt ,
K. J. Reeson ,
R. M. Gwilliam ,
K. P. Homewood ,
R. J. Wilson ,
R. S. Spraggs ,
B. J. Sealy ,
C. D. Meekison ,
G. R. Booker  and
P. Oberschachtsiek
T. D. Hunt
Affiliation:
Dept. of Electronic and Electrical Engineering, University of Surrey, Guildford, Surrey, GU2 5XH, UK.
K. J. Reeson
Affiliation:
Dept. of Electronic and Electrical Engineering, University of Surrey, Guildford, Surrey, GU2 5XH, UK.
R. M. Gwilliam
Affiliation:
Dept. of Electronic and Electrical Engineering, University of Surrey, Guildford, Surrey, GU2 5XH, UK.
K. P. Homewood
Affiliation:
Dept. of Electronic and Electrical Engineering, University of Surrey, Guildford, Surrey, GU2 5XH, UK.
R. J. Wilson
Affiliation:
Dept. of Electronic and Electrical Engineering, University of Surrey, Guildford, Surrey, GU2 5XH, UK.
R. S. Spraggs
Affiliation:
Dept. of Electronic and Electrical Engineering, University of Surrey, Guildford, Surrey, GU2 5XH, UK.
B. J. Sealy
Affiliation:
Dept. of Electronic and Electrical Engineering, University of Surrey, Guildford, Surrey, GU2 5XH, UK.
C. D. Meekison
Affiliation:
Dept. of Electronic and Electrical Engineering, University of Surrey, Guildford, Surrey, GU2 5XH, UK.
G. R. Booker
Affiliation:
Dept. of Electronic and Electrical Engineering, University of Surrey, Guildford, Surrey, GU2 5XH, UK.
P. Oberschachtsiek
Affiliation:
Dept. of Electronic and Electrical Engineering, University of Surrey, Guildford, Surrey, GU2 5XH, UK.
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Abstract

IBS of buried α and β iron suicide layers was achieved by the implantation of 2 MeV 56Fe+ ions into (100) single crystal silicon substrates over a dose range of 3 × 1017 to 1 × 1018 cm“-2followed by a high temperature anneal. No photoluminescence was observed from the as-implanted samples which contained a discontinuous layer of βFeSi2 precipitates approximately 1.5 μm below the silicon surface. Upon annealing at 700°C, a 200 nm polycrystalline βFeSi2 layer was formed which gave a PL signal centred at 1.55 μm. After a 900°C anneal, the layer transformed to αFeSix with a resistivity of approximately 280μΩcm.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 260: Symposium C – Advanced Metallization and Processing for Semiconductor Devices and Circuits , 1992 , 239
Copyright
Copyright © Materials Research Society 1992

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References

REFERENCES

1. Oostra, D. J., Vandenhoudt, D. E. W., Bulle-Lieuwma, C. W. T., Naburgh, E. P., Appl. Phys. Lett. 59, 1737 (1991).Google Scholar
2. Radermacher, K., Mantl, S., Dieker, Ch., Lüth, H., Appl. Phys. Lett. 59, 2145 (1991).Google Scholar
3. Eppenga, R., J. Appl. Phys. 68, 3027 (1990).Google Scholar
4. Christensen, N. E., Phys. Rev. B, 42, 7148 (1990).Google Scholar
5. Dimitriadis, C. A., Werner, J. H., Logothetidis, S., Stutzmann, M., Weber, J., Nesper, R., J. Appl. Phys. 68, 1726 (1990).Google Scholar
6. Bost, M. C., Mahan, J. E., J. Vac. Sci. Technol. B4, 1336 (1986).Google Scholar
7. Reeson, K. J., Robinson, A. K., Hemment, P. L. F., Marsh, C. D., Christensen, K. N., Booker, G. R., Chater, R. J., Kilner, J. A., Harbeke, G., Steigmeir, E. F., Celler, G. K., Microelectronic Eng. 8, 163 (1988).Google Scholar
8. Reeson, K. J., Spraggs, R. S., Gwilliam, R. M., Sealy, B. J., Mat. Sci. & Eng. B12, 123, (1992).CrossRefGoogle Scholar
9. Mahan, J. E., Geib, K. M., Robinson, G. Y., Long, R. G., Xinghua, Y., Bai, G., Nicolet, M. -A., Nathan, M., Appl. Phys. Lett. 56, 2126 (1990).Google Scholar
10. Cherief, N., D'Anterroches, C., Cinti, R. C., Nguyen Tan, T. A., Derrien, J., Appl. Phys. Lett. 55, 1671 (1989).Google Scholar
11. Nicolet, M. -A., Lau, S. S., VLSI Electronics: Microstructure and Science, (Academic, New York, 1983), 6, 329.Google Scholar
12. Sidorenko, F. A., Gel'd, P. V., Dubrovskaya, L. B., Fiz. Met. Metalloved, 8, 735 (1959).Google Scholar
13. Birkholz, U., Schelm, J., Phys. Status Solidi, 34, K177 (1969).Google Scholar
14. Strukov, I. N., Gel'd, P. V., Fiz. Metalloved, 4, 190 (1957).Google Scholar
15. Geserich, H. P., Sharma, S. K., Theiner, W. A., Philos. Mag. 27, 1001 (1973).Google Scholar