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Nanoindentation of Epitaxial Films: A Study of Pop-in Events

Published online by Cambridge University Press:  21 February 2011

A. B. Mann ,
J. B. Pethica ,
W. D. Nix  and
S. Tomiya
A. B. Mann
Affiliation:
Oxford University, Dept. of Materials, Oxford, OX1 3PH, UK.
J. B. Pethica
Affiliation:
Oxford University, Dept. of Materials, Oxford, OX1 3PH, UK.
W. D. Nix
Affiliation:
Stanford University, Dept. of Materials Science & Engineering, Stanford, CA 94305, USA.
S. Tomiya
Affiliation:
Sony Research Centre, 174 Fujitsuka-cho, Hodogaya-ku, Yokohama 240, Japan
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Abstract

Discontinuities in nanoindentation loading curves are frequently observed in ceramic materials. These normally occur at fairly random loads and displacements, probably due to the random distance of pre-existing defects from the indent location. Here we report the observation of reproducible, sudden indent-depth changes which occur over a very narrow distribution of depths and loads, for GaAs and a range of related epitaxial layer systems. The surface preparation and material defect density have a significant influence. Different tip geometries have been used to gain insights into the deformation processes which cause these discontinuities.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 356: Symposium B2 – Thin Films: Stresses and Mechanical Properties V , 1994 , 271
Copyright
Copyright © Materials Research Society 1995

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