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Crystal Stability and Microstructural Evolution in Polycrystalline Si Films During Ion Irradiation

Published online by Cambridge University Press:  21 February 2011

Harry A. Atwater  and
Walter L. Brown
Harry A. Atwater
Affiliation:
California Institute of Technology, Pasadena, CA 91125
Walter L. Brown
Affiliation:
A.T.&T. Bell Laboratories, Murray Hill, N.J. 07974.
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Abstract

Amorphous Si is nucleated heterogeneously at grain boundaries during irradiation of polycrystalline Si by 1.5 MeV Xe+ ions for temperatures of 150–225°C. Following formation at grain boundaries, the amorphous Si layer grows at a rate comparable to the growth rate of a pre-existing amorphous-crystal interface, resulting in a decrease in average grain size and a marked change in the grain size distribution. The heterogeneous nucleation kinetics of amorphous Si are strongly dependent on grain boundary structure. A simple atomistic model for amorphous phase formation, which suggests that the nucleation kinetics are dependent on the point defect mobilities and grain boundary structure, is related to the experimental results.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 147: Symposium C – Ion Beam Processing of Advanced Electronic Materials , 1989 , 107
Copyright
Copyright © Materials Research Society 1989

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