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Effect of oxygen on the formation of end-of-range disorder in implantation amorphized silicon

Published online by Cambridge University Press:  31 January 2011

E. Lorenz ,
J. Gyulai ,
L. Frey ,
H. Ryssel  and
N.Q. Khanh
E. Lorenz
Affiliation:
Fraunhofer-Arbeitsgruppe für Integrierte Schaltungen, Artilleriestr 12, W-8520 Erlangen, Germany
J. Gyulai
Affiliation:
Fraunhofer-Arbeitsgruppe für Integrierte Schaltungen, Artilleriestr 12, W-8520 Erlangen, Germany
L. Frey
Affiliation:
Fraunhofer-Arbeitsgruppe für Integrierte Schaltungen, Artilleriestr 12, W-8520 Erlangen, Germany
H. Ryssel
Affiliation:
Fraunhofer-Arbeitsgruppe für Integrierte Schaltungen, Artilleriestr 12, W-8520 Erlangen, Germany
N.Q. Khanh
Affiliation:
Joint Institute for Experimental Physics of the Technical University of Budapest and of the Central Research Institute of Physics, H-1525 Budapest, P. O. Box 49, Hungary
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Abstract

Formation of End-of-Range (EOR) disorder was studied in (100)-oriented silicon, when subjected to amorphization by implantation of Ge+ ions, followed by a 10 s Rapid Thermal Annealing (RTA) at 1050 °C. XTEM, RBS/channeling, and SIMS were used to analyze Czochralski grown (CZ) silicon wafers with oxygen concentrations of 6.5, 7.0, and 8.0 × 1017/cm3 and Float Zone (FZ) silicon, as “low oxygen” wafers. Amorphization on neighboring parts of the 4″ wafers was made either by 60 keV Ge+ implantation or by 110 keV Ge+ implantation and by sequential (60 keV + 110 keV) Ge+ implantation. Parts of each wafer were additionally implanted with 13 keV boron. In FZ silicon, no defects were found for 60 keV Ge+ implantation and RTA at 1050 °C. For 110 keV Ge+ and sequential (60 keV + 110 keV) Ge+ implantation in FZ-silicon the majority of the samples showed perfect annealing. Two wafers, however, subjected to sequential implantation still contained defects but with a defect density that was one order of magnitude lower than for CZ wafers. For one of them, not even a continuous layer of defects was formed. In contrast, CZ wafers contained defect bands, except for the 60 keV Ge+ implantation [in accord with the findings of Ozturk et al., IEEE Trans. on Electronic Dev. 35, 659 (1988)]. The presence of boron had no visible effect on the defect structure.

Type
Articles
Information
Journal of Materials Research , Volume 6 , Issue 8 , August 1991 , pp. 1695 - 1700
Copyright
Copyright © Materials Research Society 1991

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