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Carrier Dynamics in MOVPE-Grown Bulk InGaAsNSb Materials and Epitaxial Lift-Off GaAs Double Heterostructures for Multi-junction Solar Cells

Published online by Cambridge University Press:  08 April 2014

Yongkun Sin ,
Stephen LaLumondiere ,
Nathan Wells ,
Zachary Lingley ,
Nathan Presser ,
William Lotshaw ,
Steven C. Moss ,
Tae Wan Kim ,
Kamran Forghani  and
Luke J. Mawst
...Show all authors
Yongkun Sin
Affiliation:
Electronics and Photonics Lab, The Aerospace Corporation, El Segundo, CA 90245
Stephen LaLumondiere
Affiliation:
Electronics and Photonics Lab, The Aerospace Corporation, El Segundo, CA 90245
Nathan Wells
Affiliation:
Electronics and Photonics Lab, The Aerospace Corporation, El Segundo, CA 90245
Zachary Lingley
Affiliation:
Electronics and Photonics Lab, The Aerospace Corporation, El Segundo, CA 90245
Nathan Presser
Affiliation:
Electronics and Photonics Lab, The Aerospace Corporation, El Segundo, CA 90245
William Lotshaw
Affiliation:
Electronics and Photonics Lab, The Aerospace Corporation, El Segundo, CA 90245
Steven C. Moss
Affiliation:
Electronics and Photonics Lab, The Aerospace Corporation, El Segundo, CA 90245
Tae Wan Kim
Affiliation:
Electrical and Computer Engineering Dept., University of Wisconsin – Madison, Madison, WI 53706
Kamran Forghani
Affiliation:
Electrical and Computer Engineering Dept., University of Wisconsin – Madison, Madison, WI 53706
Luke J. Mawst
Affiliation:
Electrical and Computer Engineering Dept., University of Wisconsin – Madison, Madison, WI 53706
Thomas F. Kuech
Affiliation:
Chemical and Biological Engineering Dept., University of Wisconsin – Madison, Madison, WI 53706
Rao Tatavarti
Affiliation:
MicroLink Devices Inc., Niles, IL 60714
Andree Wibowo
Affiliation:
MicroLink Devices Inc., Niles, IL 60714
Noren Pan
Affiliation:
MicroLink Devices Inc., Niles, IL 60714
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Abstract

High performance and cost effective multi-junction III-V solar cells are attractive for satellite applications. High performance multi-junction solar cells are based on a triple-junction design that employs an InGaP top-junction, a GaAs middle-junction, and a bottom-junction consisting of a 1.0 – 1.25 eV-material. The most attractive 1.0 – 1.25 eV-material is the lattice-matched dilute nitride such as InGaAsN(Sb). A record efficiency of 43.5% was achieved from multi-junction solar cells including dilute nitride materials [1]. In addition, cost effective manufacturing of III-V triple-junction solar cells can be achieved by employing full-wafer epitaxial lift-off (ELO) technology, which enables multiple substrate re-usages. We employed time-resolved photoluminescence (TR-PL) techniques to study carrier dynamics in both pre- and post-ELO processed GaAs double heterostructures (DHs) as well as in MOVPE-grown bulk dilute nitride layers lattice matched to GaAs substrates.

Keywords

III-Vphotovoltaicdefects
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1635: Symposium T – Compound Semiconductor Materials and Devices , 2014 , pp. 55 - 62
Copyright
Copyright © Materials Research Society 2014 

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References

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