Hostname: page-component-76fb5796d-x4r87 Total loading time: 0 Render date: 2024-04-26T01:21:12.688Z Has data issue: false hasContentIssue false
  • English
  • Français

Thin Film Growth of High Tc Superconductors by Microwave Plasma Assisted Reactive Evaporation

Published online by Cambridge University Press:  16 February 2011

Akira Tukamoto ,
Masahiko Hiratani ,
Toshiyuki Aida ,
Yoshinobu Tarutani  and
Kazumasa Takagi
Akira Tukamoto
Affiliation:
Central Research Laboratory, Hitachi Ltd., Kokubunji, Tokyo 185, Japan
Masahiko Hiratani
Affiliation:
Central Research Laboratory, Hitachi Ltd., Kokubunji, Tokyo 185, Japan
Toshiyuki Aida
Affiliation:
Central Research Laboratory, Hitachi Ltd., Kokubunji, Tokyo 185, Japan
Yoshinobu Tarutani
Affiliation:
Central Research Laboratory, Hitachi Ltd., Kokubunji, Tokyo 185, Japan
Kazumasa Takagi
Affiliation:
Central Research Laboratory, Hitachi Ltd., Kokubunji, Tokyo 185, Japan
Get access

Abstract

The oxidizing activity of an oxygen plasma is investigated in terms of the oxygen content of HoBa2Cu3Ox. thin films. The thermodynamically stable region of HoBa2Cu3Ox. and the region where the HoBa2Cu2Ox films are formed are also determined both in molecular oxygen and in an oxygen plasma. The oxidizing activity of an oxygen plasma is equivalent to that of molecular oxygen at three orders of magnitude higher pressure. The oxygen plasma expands the thermodynamic stability limit toward higher temperatures and the oxidizing activity limit toward lower oxygen pressures. In addition, the interfacial reaction between an oxide superconductor and silicon is investigated. The oxygen ions in HoBa2Cu3O film diffuse into Si even at room temperature, probably enhanced by the strong affinity of silicon for oxygen ions.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 223: Symposium E – Low Energy Ion Beam and Plasma Modification of Materials , 1991 , 135
Copyright
Copyright © Materials Research Society 1991

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Aida, T., Tsukamoto, A., Imagawa, K., Fukazawa, T., Saito, S., Shindo, K., Takagi, K. and Miyauchi, K., Jpn. J. Appl. Phys. 28, L635(1989).Google Scholar
2. Kwo, J., Hong, M., Trever, D.J., Fleming, R.M., White, A.E., Farrow, R.C., Kortan, A.R. and Short, K.T., Appl. Phys. Lett. 53, 2683(1988).Google Scholar
3. Moriwaki, K., Enomoto, Y., Kubo, S. and Marakami, T., Jpn. J. Appl. Phys. 27, L2075(1988).Google Scholar
4. Terashima, T., lijima, K., Yamamoto, K., Bando, Y. and Mazaki, H., Jpn. J. Appl. Phys. 27, L91(1988).Google Scholar
5. Missert, N., Hammond, R., Mooij, J.E., Matijacevic, V., Rosenthal, P., Geballe, T.H., Kapitulnic, A., Beasley, M.R., Laderman, S.S., Lu, C., Garwin, E. and Barton, R., IEEE Transaction on Magnetics 25, 2418(1989).Google Scholar
6. Schlom, D.G., Eckstein, J.N., Bozovic, I., Marchall, A.F., Sizemore, J.T., Chen, Z.J., Von Dessonneck, K.E., Harris, J.S. Jr. and Bravman, J.C., in High-Temperature Superconductors: Fundamental Properties and Novel Materials Processing, edited by Christen, D., Narayan, J. and Schneemeyer, L. (Mat. Res. Soc. Symp. Proc. 169, Boston, Massachusetts, 1989) pp. 711–714 Google Scholar
7. Watanabe, S., Kawai, M. and Hanada, T., Jpn. J. Appl. Phys. /29, L1111(1990).Google Scholar
8. Tsukamoto, A., Imagawa, K., Hiratani, M., Aida, T. and Miyauchi, K., J. Appl. Phys. 68, 5278(1990).Google Scholar
9. Miyake, K., To be published in Commemmorative book on GASEOUS ELECTRONICS AND ITS APPLICATIONS,(1991).Google Scholar
10. Becker, S. and Dietze, H.-J., Physica C 167, 509(1990).Google Scholar
11. , Jorgensen, Veal, B.W., Paulikas, A.P., Nowicki, L.J., Crabtee, G.W., Claus, H. and Kwok, W.K., Phys. Rev. B 41, 1863(1990).Google Scholar
12. Yamamoto, K., Lairson, B.M., Eom, C.B., Hammond, R.H., Bravman, J.C. and Geballe, T.H., Appl. Phys. Lett. 57, 1936(1990).Google Scholar
13. Bormman, R. and Nolting, J., Appl. Phys. Lett. 54, 2148(1989).Google Scholar
14. Hammond, R.H. and Bormman, R., Pysica C 162–164, 703(1989).Google Scholar
15. Kishio, K., Shimoyama, J., Hasegawa, T., Kitazawa, K. and Fueki, K., Jpn. J. Appl. Phys. 26, L1156(1987).Google Scholar
16. Tarutani, Y., Fukazawa, T., Kabasawa, U., Tsukamoto, A., Hiratani, M., Suga, M. and Takagi, K.: Extended Abstruct of 3rd FED WORKSHOP ON HIGH-TEMPERATURE SUPERCONDUCTING ELECTRON DEVICES Kumamoto, Japan, 1991, pp.190–193.Google Scholar