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Characterization of Cleaved GaAs(110) with a Scanning Photoemission Microscope Capable of Submicron Resolution

Published online by Cambridge University Press:  15 February 2011

A. K. Ray-Chaudhuri ,
W. Ng ,
S. Liang ,
S. Singh ,
H. Solak  and
F. Cerrina
A. K. Ray-Chaudhuri
Affiliation:
Center for X-ray Lithography, University of Wisconsin-Madison, 3731 Schneider Dr., Stoughton, WI 53589
W. Ng
Affiliation:
Center for X-ray Lithography, University of Wisconsin-Madison, 3731 Schneider Dr., Stoughton, WI 53589
S. Liang
Affiliation:
Center for X-ray Lithography, University of Wisconsin-Madison, 3731 Schneider Dr., Stoughton, WI 53589
S. Singh
Affiliation:
Center for X-ray Lithography, University of Wisconsin-Madison, 3731 Schneider Dr., Stoughton, WI 53589
H. Solak
Affiliation:
Center for X-ray Lithography, University of Wisconsin-Madison, 3731 Schneider Dr., Stoughton, WI 53589
F. Cerrina
Affiliation:
Center for X-ray Lithography, University of Wisconsin-Madison, 3731 Schneider Dr., Stoughton, WI 53589
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Abstract

We have utilized a scanning photoemission spectromicroscope with sub-micron spatial resolution to observe microscopic Fermi level pinning on the cleaved GaAs(110) surface. We present micrographs which identify pinning that is highly localized to the vicinity of a single linear cleavage step. This extends previous work utilizing scanning Kelvin probe and imaging photoelectron microscopy conducted at lower spatial resolution. A sub-monolayer coverage of In uniformly pins the surface, thus allowing us to observe only the image contrast mechanism resulting from topography. From this one can determine the spatial extent of defects near a cleavage step. Initial observations indicate that Fermi level pinning can extend from a cleavage step over the range of 2 μm. This indicates the additional presence of defects at the adjacent surfaces of the step.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 307: Symposium L – Applications of Synchrotron Radiation Techniques to Materials Science , 1993 , 255
Copyright
Copyright © Materials Research Society 1993

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References

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