Hostname: page-component-76fb5796d-vvkck Total loading time: 0 Render date: 2024-04-26T19:04:34.440Z Has data issue: false hasContentIssue false
  • English
  • Français

Electrical Properties of Phosphorus-Doped and Boron-Doped Nanocrystalline Germanium Thin-Films for p-i-n Devices

Published online by Cambridge University Press:  01 February 2011

William B. Jordan  and
Sigurd Wagner
William B. Jordan
Affiliation:
Department of Electrical Engineering, Princeton University, Princeton, NJ 08544
Sigurd Wagner
Affiliation:
Department of Electrical Engineering, Princeton University, Princeton, NJ 08544
Get access

Abstract

Nanocrystalline germanium thin-films deposited on glass by plasma-enhanced chemical vapor deposition from germane and hydrogen were doped with phosphorus and boron. We report some electrical transport and structural properties of Ge films as a function of dopant species and doping levels. The dark conductivities of the phosphorus- and boron-doped films are approximately three to four orders of magnitude higher than the intrinsic nanocrystalline germanium. In the solid phase, phosphorus comprised about 1 atomic percent in the Ge bulk over the range of source gas ratios used, and the conductivity remained fairly constant, indicating saturated conditions. Boron comprised about 10 atomic percent in Ge at the highest dark conductivity, while increased doping turned the films amorphous. To test the doped layers for device applications, an all-nanocrystalline germanium p-i-n diode was constructed and showed rectification when measured in the dark at room temperature.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 762: Symposium A – Amorphous and Nanocrystalline Silicon-Based Films – 2003 , 2003 , A5.7
Copyright
Copyright © Materials Research Society 2003

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Krause, M., H Stiebig, Carius, R., Wagner, H., Mat. Res. Soc. Symp. Proc. 664, A26.5 (2001).Google Scholar
2. Jordan, W.B, Carlson, E.D., Johnson, T.R., and Wagner, S., Mat. Res. Soc. Spring Meeting, April, 2003; San Francisco, CA; paper A6.5.Google Scholar
3. Poulsen, P.R., Wang, M., Xu, J., Li, W., Chen, K., Wang, G., and Feng, D., J. Appl. Phys. 84, 3386 (1998).Google Scholar
4. Jiang, J., Chen, K., Feng, D., and Sun, D., Thin Solid Films 230, 7 (1993). 149, 93 (1989).Google Scholar
5. Jordan, W.B and Wagner, S., Mat. Res. Soc. Symp. Proc. 715, 509 (2002)Google Scholar
6. Yu, P.Y., Cardona, M., Fundamentals of Semiconductors, Springer-Verlag, 1996. pp. 375–392.Google Scholar
7. Palik, E.D., ed., Handbook of Optical Constants of Solids. Academic Press, 1985. pp. 472–473.Google Scholar
8.Evans East, East Windsor, New Jersey.Google Scholar