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Depth-Resolved and Excitation Power Dependent Cathodo-Luminescence of MBE Grown Cubic GaN Epilayers

Published online by Cambridge University Press:  10 February 2011

D. J. As ,
C. Wang ,
B. Schöttker ,
D. Schikora  and
K. Lischka
D. J. As
Affiliation:
Universität Paderborn, FB-6 Physik, Warburger Straße 100, D-33095 Paderborn, Germany, d.as@uni-paderborn.de
C. Wang
Affiliation:
Universität Paderborn, FB-6 Physik, Warburger Straße 100, D-33095 Paderborn, Germany, d.as@uni-paderborn.de
B. Schöttker
Affiliation:
Universität Paderborn, FB-6 Physik, Warburger Straße 100, D-33095 Paderborn, Germany, d.as@uni-paderborn.de
D. Schikora
Affiliation:
Universität Paderborn, FB-6 Physik, Warburger Straße 100, D-33095 Paderborn, Germany, d.as@uni-paderborn.de
K. Lischka
Affiliation:
Universität Paderborn, FB-6 Physik, Warburger Straße 100, D-33095 Paderborn, Germany, d.as@uni-paderborn.de
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Abstract

We present a detailed investigation of the cathodoluminescence (CL) of MBEgrown cubic GaN (c-GaN) epitaxial layers. Under high excitation conditions the room temperature CL-spectrum is dominated by a single excitonic emission band at about 3.21 eV with a full width at half maximum of 55 meV. Under low electron beam excitation a second, deep emission band at 2.4 eV is observable. A strong variation of the ratio between the deep luminescence intensity and the near band edge luminescence intensity ratio is observed with increasing excitation intensity. Using a simple model based on bimolecular rate equations the concentration of defects involved in this transition is estimated to be about 1015 cm−3. CL-measurements with varying excitation intensity reveal that these recombination levels have only minor influence on the performance of high injection optoelectronic devices like laser diodes. Depth resolved measurements and CL-images from a cleaved c-GaN/GaAs reveal that the deep recombination centers are homogeneously distributed within the epilayer, however the concentration of nonradiative recombination centers is increasing towards the GaN/GaAs interface.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 482 , 1997 , 661
Copyright
Copyright © Materials Research Society 1998

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