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Piezoelectric Field and its Influence on the Pressure Behavior of the Light Emission from InGaN/GaN and GaN/AlGaN Quantum Wells

Published online by Cambridge University Press:  21 March 2011

T. Suski ,
P. Perlin ,
S.P. Lepkowski ,
H. Teisseyre ,
I. Gorczyca ,
P. Prystawko ,
M. Leszczynski ,
N. Grandjean ,
J. Massies  and
T. Kitamura
...Show all authors
T. Suski
Affiliation:
High Pressure Research Center, “Unipress”, 01-142 Warsaw, Poland
P. Perlin
Affiliation:
High Pressure Research Center, “Unipress”, 01-142 Warsaw, Poland
S.P. Lepkowski
Affiliation:
High Pressure Research Center, “Unipress”, 01-142 Warsaw, Poland
H. Teisseyre
Affiliation:
High Pressure Research Center, “Unipress”, 01-142 Warsaw, Poland
I. Gorczyca
Affiliation:
High Pressure Research Center, “Unipress”, 01-142 Warsaw, Poland
P. Prystawko
Affiliation:
High Pressure Research Center, “Unipress”, 01-142 Warsaw, Poland
M. Leszczynski
Affiliation:
High Pressure Research Center, “Unipress”, 01-142 Warsaw, Poland
N. Grandjean
Affiliation:
CRHEA - Centre National de la Recherche Scientifique, 06560 Valbonne, France
J. Massies
Affiliation:
CRHEA - Centre National de la Recherche Scientifique, 06560 Valbonne, France
T. Kitamura
Affiliation:
Power Electronics Research Center 2, National Institute of Advance Industrial Science and Technology (AIST), Central 2, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan
Y. Ishida
Affiliation:
Power Electronics Research Center 2, National Institute of Advance Industrial Science and Technology (AIST), Central 2, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan
S.F. Chichibu
Affiliation:
Power Electronics Research Center 2, National Institute of Advance Industrial Science and Technology (AIST), Central 2, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan
H. Okumura
Affiliation:
Power Electronics Research Center 2, National Institute of Advance Industrial Science and Technology (AIST), Central 2, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan
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Abstract

In this paper we review studies aiming at elucidation of the mechanisms responsible for anomalously low pressure coefficients of the light emission energy, dEE/dP, observed in quantum structures of InGaN/GaN and GaN/AlGaN. We have established that in hexagonal InGaN/GaN and GaN/AlGaN structures the main mechanism involved is related to the pressure induced increase of the piezoelectric field which determines also the strong red shift of the emission energy with thickness of the quantum well. To reproduce the experimental findings in InGaN/GaN case, it is necessary to take into account the dependence of the piezoelectric constants on the volume-conserving strain. Whereas the experimental results on a decrease of dEE/dP in GaN/AlGaNstructures can be fully accounted for within the linear elasticity theory. In contrast to these findings, dEE/dP magnitude measured in cubic InGaN/GaN quantum structures shows value close to changes of the InGaN bangap with pressure obtained from first principle calculations. The latter result is consistent with the absence of the built-in electric fields in the cubic nitride structures.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 693 , 2001 , I7.6.1
Copyright
Copyright © Materials Research Society 2002

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Footnotes

*

also at Institute of Applied Physics, University of Tsukuba, 1-1-1 Tennodai, Tsukuba, Ibaraki 305-8573, Japan and ERATO Japan Science and Technology Corporation, Kawaguchi, Saitama 332-0012, Japan

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