Hostname: page-component-76fb5796d-qxdb6 Total loading time: 0 Render date: 2024-04-26T04:53:03.501Z Has data issue: false hasContentIssue false
  • English
  • Français

Rapid Thermal Processing of Ferroelectric Thin Films

Published online by Cambridge University Press:  28 February 2011

Zheng Wu ,
Roberto Pascual ,
C.V.R. Vasant Kumar ,
David Amd  and
Michael Sayer
Zheng Wu
Affiliation:
Department of Physics, Queens University, Kingston, Ontario, Canada K7L 3N6
Roberto Pascual
Affiliation:
Department of Materials and Metallurgical Engineering, Queens University, Kingston, Ontario, Canada K7L 3N6
C.V.R. Vasant Kumar
Affiliation:
Department of Physics, Queens University, Kingston, Ontario, Canada K7L 3N6
David Amd
Affiliation:
Department of Physics, Queens University, Kingston, Ontario, Canada K7L 3N6
Michael Sayer
Affiliation:
Department of Physics, Queens University, Kingston, Ontario, Canada K7L 3N6
Get access

Abstract

The preparation of ferroelectric lead zirconate titanate (PZT) thin films by rapid thermal processing (RTP) is reported. The films were deposited by chemical sol gel and physical sputter techniques. The heating rate of RTP was found to have significant influence on the crystallization behavior. Faster heating rates lead to lowering of the crystallization temperature and reduction of grain size. PZT films were obtained with dielectric constants ~ 1000, remanent polarizations between 20 and 30μC/cm2, coercive fields 20 to 60kV/cm, and no significant fatigue for 109 to 1010 stressing cycles.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 224: Symposium F – Rapid Thermal and Integrated Processing I , 1991 , 305
Copyright
Copyright © Materials Research Society 1991

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

[1] Araujo, C.A., McMilan, L.D., Melnick, B.M., Cuchiaro, J.D., and Scott, J.F., Ferroelectrics, 104, 241(1990).CrossRefGoogle Scholar
[2] Yi, G., Wu, Z., and Sayer, M., J. Appl. Phys. 64, 2717(1988).CrossRefGoogle Scholar
[3] Takayama, R., Tomita, Y., Iijima, K., and Ueda, I., J. Appl. Phys. 61, 411(1987).CrossRefGoogle Scholar
[4] Kumar, C.V.R.Vasant, Sayer, M., Pascual, R., Amm, D.T., Wu, Z., and Swanston, D.M., Appl. Phys. Lett. 58, 1161(1991).CrossRefGoogle Scholar
[5] Mostaghaci, H. and Brook, R.J., Trans. J. Br. Ceram. Soc. 82, 167(1983).Google Scholar
[6] Kumar, C.V.R.Vasant, Pascual, R., and Sayer, M., submitted to J. Appl. Phys.Google Scholar
[7] Budd, K.D., Dey, S.K., and Payne, D.A., Brit. Ceram. Proc. 36, 107(1985).Google Scholar
[8] Kumar, C.V.R.Vasant, Pascual, R., and Sayer, M., presented at the 3rd Symposium on Integrated Ferroelectrics, Colorado Springs, Colorado, 1991.Google Scholar
[9] Sayer, M., presented at the 3rd Symposium on Integrated Ferroelectrics, Colorado Springs, Colorado, 1991.Google Scholar
[10] Yi, G. and Sayer, M., to be published in the Ceramic Bulletin of the American Ceramic Society, July 1, 1991.Google Scholar