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Silver antimony sulfide-selenide for thin film solar cells

Published online by Cambridge University Press:  10 September 2014

Jesús Capistrán-Martínez ,
M.T.S Nair  and
P.K. Nair
Jesús Capistrán-Martínez
Affiliation:
Instituto de Energías Renovables, Universidad Nacional Autónoma de México Temixco-62580, Morelos, México
M.T.S Nair
Affiliation:
Instituto de Energías Renovables, Universidad Nacional Autónoma de México Temixco-62580, Morelos, México
P.K. Nair
Affiliation:
Instituto de Energías Renovables, Universidad Nacional Autónoma de México Temixco-62580, Morelos, México
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Abstract

Thin films of AgSbS2 (150 nm) are prepared (75 min at 40 °C) via chemical deposition using a solution mixture containing SbCl3, Na2S2O3 and AgNO3. As-deposited films are amorphous. When they are heated in nitrogen at 180-320 °C, crystalline cubic-AgSbS2 films are formed. They show an optical band gap 1.89 eV and photoconductivity 1.8x10-5 Ω-1cm-1. Silver antimony sulfide-selenide film, AgSb(SxSe1-x)2, is produced from the initial amorphous film when it is heated in presence of Se-vapor. XRD analysis confirms the formation of solid solution AgSbS1.25Se0.75 or AgSbSe2 depending on the extent of Se-vapor available during heating. SnO2:F/CdS/AgSbS2/C solar cell shows Voc 610 mV, Jsc 0.88 mA/cm2,FF 0.53 and η 0.28%. In SnO2:F/CdS/Sb2S3/AgSb(SxSe1-x)2/C solar cell, Voc is 582 mV, Jsc 0.99 mA/cm2, FF 0.51 and η 0.29%.

Keywords

photovoltaicelectrical propertieselectronic material
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1670: Symposium E – Advances in the Characterization, Performance and Defect Engineering of Earth Abundant and Thin-Film Materials for Solar Energy Conversion , 2014 , mrss14-1670-e05-11
Copyright
Copyright © Materials Research Society 2014 

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