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Diffusion Lengths in a-SiGe:H and a-SiC:H Alloys from Optical Grating Technique

Published online by Cambridge University Press:  26 February 2011

G. H. Bauer ,
C. E. Nebel  and
H.-D. Mohring
G. H. Bauer
Affiliation:
Institut fuer Physikalische Elektronik, Universitaet Stuttgart, Pfaffenwaldring 47, D-7000 Stuttgart 80, F.R. Germany
C. E. Nebel
Affiliation:
Institut fuer Physikalische Elektronik, Universitaet Stuttgart, Pfaffenwaldring 47, D-7000 Stuttgart 80, F.R. Germany
H.-D. Mohring
Affiliation:
Institut fuer Physikalische Elektronik, Universitaet Stuttgart, Pfaffenwaldring 47, D-7000 Stuttgart 80, F.R. Germany
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Abstract

Ambipolar diffusion lengths in a-SiGe:H and a-SiC:H have been analyzed by Steady State Photocarrier Grating Technique. Diffusion lengths and photoconductivity of a-Si:H are considerably affected by alloying. Photoconductivity in a-SiGe:H can be improved by special deposition methods, diffusion lengths, however turn out to remain nearly unchanged. The comparison of diffusion lengths and -ho~oconductivity yields hole mobilities in a-Si1-xGex:H of 10-2cm2 /Vs for O≤×≤O.2. For a-Si:H changes in photoconductivity by generation of defects (light soaking) result in noticeable changes in diffusion lengths, whereas different photoconductivities in a-SiGe:H caused by different deposition methods end up in the same diffusion lengths. Consequently the improvement of a-SiGe:H photoconductivity by changes in deposition condition is by far a much more complex process than only decrease of density of midgap states.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 118: Symposium E – Amorphous Silicon Technology , 1988 , 679
Copyright
Copyright © Materials Research Society 1988

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