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Herein we propose an alternate simpler mechanism for a new phenomenon we reported recently in this journal [Z.M. Sun, S. Gupta, H. Ye, and M.W. Barsoum, J. Mater. Res.20, 2618 (2005)]. The presence of freestanding Ga nanoribbons on Cr2GaC surfaces were found to be the leftover skins of Ga whiskers or spheres that were reabsorbed into the Cr2GaC grain boundaries, most likely as a result of their melting.
Powder mixtures of 3Ti/SiC/C/xAl with different Al contents (x=0∼0.2) were reactively sintered by pulse discharge sintering (PDS) process, to reveal the effect of Al addition on the single-phase bulk Ti3SiC2 synthesis. It was found that the optimal sintering temperature for the Ti3SiC2 synthesis is greatly decreased by the Al addition. Almost single-phase bulk Ti3SiC2 material can be synthesized from 3Ti/SiC/C/0.15Al and 3Ti/SiC/C/0.20Al powder mixtures at temperature as low as 1200°C for 15 min by PDS. And the optimal temperature range for the Ti3SiC2 formation is enlarged obviously by the Al addition.
Powder mixtures of Ti/Si/C, Ti/SiC/C, Ti/Si/TiC, Ti/SiC/TiC and Ti/TiSi2/TiC were used for the synthesis of Ti3SiC2 by using a pulse discharge sintering (PDS) process. The Ti/Si/TiC powder was found to be the best among the five powder mixtures for the Ti3SiC2 synthesis. The highest content of Ti3SiC2 can be improved to about 99wt% at the sintering temperature of 1300°C for 15 minutes. The relative density of all the synthesized samples is higher than 98–99% at the sintering temperature above 1275°C. The nearly single phase Ti3SiC2 was found to show plastic deformation at room temperature and a good machinability. Both electrical and thermal conductivity were found to be more than two times of the value of a control pure Ti sample. The high-temperature mechanical tests confirmed that the Ti3SiC2 samples synthesized by the PDS process displayed a comparable performance with those fabricated by the other techniques.
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