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Recent photoemission studies on heavily boron-doped superconducting diamond films, reporting the electronic structure evolution as a function of boron concentrations, are reviewed. From soft X-ray angle-resolved photoemission spectroscopy, which directly measures electronic band dispersions, depopulation of electrons (or formation of hole pockets) at the top of the valence band were clearly observed. This indicates that the holes at the top of the valence bands are responsible for the metallic properties and hence superconductivity at lower temperatures. Hard X-ray photoemission spectroscopy observed shift of the main C 1s core level and intensity evolution of a lower binding energy additional structure, suggesting chemical potential shift, carrier doping efficiency by boron doping, and possibility of boron-related cluster formations.
In the recent development of the studies in iron-based superconductors, high-pressure experiments have been played an important role. Large enhancement of Tc with applying pressure and pressure-induced superconductivity were reported in LaFeAsO1-xFx. In this work, electrical, magnetic and structural measurements on 1111 type Ca(Fe1-xCox)AsF and 11 type Fe(Se1-xTex)0.92 under high pressure have been performed. For Ca(Fe1-xCox)AsF, the substitution of Co suppressed the magnetic and structural transitions and raised superconductivity. Pressure-induced superconductivity was observed for x = 0.0 and 0.05. The highest Tc was obtained in parent compound under high pressure, in contrast to LaFeAsO1-xFx. These results suggest that the substitution of Co increases carrier concentration and induces disorder in the FeAs superconducting layer. For FeTe0.92, pressure-induced superconductivity was not detected under high pressure up to 19 GPa, although the resistive anomaly due to the structural and magnetic phase transition was suppressed by applying pressure.
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