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Growth of AlGaN/GaN HEMTs on Silicon Substrates by MBE
Fabrice Semond, Yvon Cordier, Franck Natali, Arnaud Le Louarn, Stéphane Vézian, Sylvain Joblot, Sébastien Chenot, Nicolas Baron, Eric Frayssinet, Jean-Christophe Moreno, Jean Massies
Journal: MRS Online Proceedings Library Archive / Volume 1068 / 2008
Published online by Cambridge University Press: 01 February 2011, 1068-C04-04
Print publication: 2008
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During the last ten years, we have developed an efficient growth process of nitrides on silicon substrates by molecular beam epitaxy. In collaboration with partners AlGaN/GaN HEMTs on Si having promising performances have been fabricated. Focusing on the growth aspect and underlying some of the key issues, we present in this paper an overview of our contribution in the field of AlGaN/GaN HEMTs on Si substrates.