6 results
Ultrathin HfO2 gate dielectric grown by plasma-enhanced chemical vapor deposition using Hf[OC(CH3)3]4 as a precursor in the absence of O2
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- Journal:
- Journal of Materials Research / Volume 18 / Issue 1 / January 2003
- Published online by Cambridge University Press:
- 31 January 2011, pp. 60-65
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- January 2003
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Improvement in tunability and dielectric loss of (Ba0.5Sr0.5)TiO3 capacitors using seed layers on Pt/Ti/SiO2/Si substrates
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- Journal:
- Journal of Materials Research / Volume 17 / Issue 11 / November 2002
- Published online by Cambridge University Press:
- 31 January 2011, pp. 2831-2836
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- November 2002
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Low-temperature Crystallization of SrBi2Ta2O9 Thin Filmswith Bi2O3 Interfacial Layers by Liquid-delivery Metalorganicchemical Vapor Deposition
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- Journal:
- Journal of Materials Research / Volume 17 / Issue 1 / January 2002
- Published online by Cambridge University Press:
- 31 January 2011, pp. 26-30
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- January 2002
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Effect of hydrogen on true leakage current characteristics of (Pb,La)(Zr,Ti)O3 thin-film capacitors with Pt- or Ir-based top electrodes
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- Journal:
- Journal of Materials Research / Volume 16 / Issue 4 / April 2001
- Published online by Cambridge University Press:
- 31 January 2011, pp. 1185-1189
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- April 2001
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Electrical Properties of Srta2O6 Thin Films Deposited by Plasma Enhanced Atomic Layer Deposition (Peald)
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- Journal:
- MRS Online Proceedings Library Archive / Volume 685 / 2001
- Published online by Cambridge University Press:
- 17 March 2011, D13.3.1
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- 2001
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Electrical and Structural Properties of SrTiO3 Thin Films Deposited by Plasma-enhanced Metalorganic Chemical Vapor Deposition
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- Journal:
- Journal of Materials Research / Volume 12 / Issue 4 / April 1997
- Published online by Cambridge University Press:
- 31 January 2011, pp. 1160-1164
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- April 1997
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