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Electrical and Structural Properties of SrTiO3 Thin Films Deposited by Plasma-enhanced Metalorganic Chemical Vapor Deposition

Published online by Cambridge University Press:  31 January 2011

Nam-Kyeong Kim ,
Soon-Gil Yoon ,
Won-Jae Lee  and
Ho-Gi Kim
Nam-Kyeong Kim
Affiliation:
Department of Material Engineering, College of Engineering, Chungnam National University, Daeduk Science Town, 305–764, Taejon, Korea
Soon-Gil Yoon
Affiliation:
Department of Material Engineering, College of Engineering, Chungnam National University, Daeduk Science Town, 305–764, Taejon, Korea
Won-Jae Lee
Affiliation:
Department of Ceramic Science & Engineering, Korea Advanced Institute of Science and Technology, Taejon, Korea
Ho-Gi Kim
Affiliation:
Department of Ceramic Science & Engineering, Korea Advanced Institute of Science and Technology, Taejon, Korea
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Abstract

The microstructure and electrical properties were investigated for SrTiO3(STO) thin films deposited on Pt/Ti/SiO2/Si substrates by PEMOCVD. The SrF2 phase existing in the STO films deposited at 450 °C influences the dielectric constant, dissipation factor, and leakage current density of STO films. The dielectric constant and dissipation factor of STO films deposited at 500 °C were 210 and 0.018 at 100 kHz, respectively. STO films were found to have paraelectric properties from the capacitance-voltage characteristics. Leakage current density of STO films at 500 °C was about 1.0 × 10-8 A/cm2 at an electric field of 70 kV/cm. The leakage current behaviors of STO films deposited at 500 and 550 °C were controlled by Schottky emission with applied electric field.

Type
Articles
Information
Journal of Materials Research , Volume 12 , Issue 4 , April 1997 , pp. 1160 - 1164
Copyright
Copyright © Materials Research Society 1997

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