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Electrical Properties of Srta2O6 Thin Films Deposited by Plasma Enhanced Atomic Layer Deposition (Peald)

  • Won-Jae Lee (a1), Chang-Ho Shin (a1), In-Kyu You (a1), Il-Suk Yang (a1), Sang-Ouk Ryu (a1), Byoung-Gon Yu (a1), Kyoung-Ik Cho (a1), Soon-Gil Yoon (a2) and Chun-Su Lee (a3)...

Abstract

The SrTa2O6 (STO) thin films were prepared by plasma enhanced atomic layer deposition (PEALD) with alternating supply of reactant sources, Sr[Ta(C2H5O)5(C4H10NO)]2 {Strontium bis-[tantalum penta-ethoxide dimethyllaminoethoxide]; Sr(Ta(OEt)5▪dmae)2} and O2plasma. It was observed that the uniform and conformal STO thin films were successfully deposited using PEALD and the film thickness per cycle was saturated at about 0.8 nm at 300°C. Electrical properties of SrTa2O6 (STO) thin films prepared on Pt/SiO2/Si substrates with annealing temperatures have been investigated. While the grain size and dielectric constant of STO films increased with increasing annealing temperature, the leakage current characteristics of STO films slightly deteriorated. The leakage current density of a 40nm-STO film was about 5×10−8A/cm2 at 3V.

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1. Goodman, C. H. L., and Pessa, M. V., J. Appl. Phys. 60, R65 (1986).
2. Wilk, G. D., and Wallace, R. M., Appl. Phys. Lett. 74, 2854 (1999).
3. Eisenbeiser, K., Finder, J. M., Yu, Z., Ramdani, J., Curless, J. A., Hallmark, J. A., Droopad, R., Ooms, W. J., Salem, L., Bradshaw, S., and Overgaard, C. D., Appl. Phys. Lett. 76, 1324 (2000).
4. Lee, B. H., Kang, L., Nieh, R., Qi, W. J., and Lee, J. C., Appl. Phys. Lett. 76, 1926 (2000).
5. McKee, R. A., Walker, F. J., and Chisholm, M. F., Phys. Rev. Lett. 81, 3014 (1998).
6. Klaus, J. W., Sneh, O., and George, S. M., Science 278, 1934 (1997).
7. Hubbard, K. J., and Schlom, D. G., J. Mater. Res. 11, 2757 (1996).
8. Packan, P. A., Science 285, 2079 (1999).
9. Ritala, M., Kukli, K., Rahtu, A., Raisanen, P. I., Leskela, M., Sajavaara, T., and Keinonen, J., Science 288, 31 (2000).
10. Tokumitsu, E., Fujii, G., and Ishiwara, H., Appl. Phys. Lett. 75, 575 (1999).
11. Scott, J. F., and Araujo, C. A. P. de, Science 246, 106 (1989).
12. Lee, W. J., Shin, C. H., Cho, C. R., Lyu, J. S., Kim, B. W., Yu, B. G., and Cho, K. I., Jpn. J. Appl.Phys. 38, 2039 (1999).
13. Crosbie, M., Wright, P., Davies, H., Jones, A., Leedham, T., O'Brien, P., and Critchlow, G., Chem. Vap. Deposition 5, 9 (1999).
14. Min, J. S., Son, Y. W., Kang, W. G., Chun, S. S., and Kang, S. W., Jpn. J. Appl. Phys. 37, 4999 (1998).
15. Suntola, T., and Simpson, M., Atomic Layer Epitaxy (Blackie, London, 1990).

Electrical Properties of Srta2O6 Thin Films Deposited by Plasma Enhanced Atomic Layer Deposition (Peald)

  • Won-Jae Lee (a1), Chang-Ho Shin (a1), In-Kyu You (a1), Il-Suk Yang (a1), Sang-Ouk Ryu (a1), Byoung-Gon Yu (a1), Kyoung-Ik Cho (a1), Soon-Gil Yoon (a2) and Chun-Su Lee (a3)...

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