9 results
Temperature measurement in AlGaN/GaN High-Electron-Mobility Transistors using micro-Raman scattering spectroscopy
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- Journal:
- The European Physical Journal - Applied Physics / Volume 30 / Issue 2 / May 2005
- Published online by Cambridge University Press:
- 11 March 2005, pp. 77-82
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- May 2005
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Temperature measurement by micro-Raman scattering spectroscopy in the active zone of AlGaN/GaN high-electron-mobility transistors
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- Journal:
- The European Physical Journal - Applied Physics / Volume 27 / Issue 1-3 / July 2004
- Published online by Cambridge University Press:
- 15 July 2004, pp. 293-296
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- July 2004
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Thermal characterisation of AlGaN/GaN HEMTs grown on silicon and sapphire substrates based on pulsed I-V measurements
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- Journal:
- The European Physical Journal - Applied Physics / Volume 22 / Issue 2 / May 2003
- Published online by Cambridge University Press:
- 06 May 2003, pp. 77-82
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- May 2003
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LP-MOCVD growth of GaAlN/GaN heterostructures on Silicon Carbide. Application to HEMT's devices.
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- Journal:
- MRS Online Proceedings Library Archive / Volume 798 / 2003
- Published online by Cambridge University Press:
- 01 February 2011, Y10.26
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- 2003
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Index of Refraction and Strain Induced Birefringence of Pseudomorphic Si1−xGex
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- Journal:
- MRS Online Proceedings Library Archive / Volume 486 / 1997
- Published online by Cambridge University Press:
- 10 February 2011, 101
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- 1997
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Boron Doping in Si-MBE
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- Journal:
- MRS Online Proceedings Library Archive / Volume 220 / 1991
- Published online by Cambridge University Press:
- 22 February 2011, 121
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- 1991
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The Mechanisms of Relaxation in Strained Layer GeSi/Si Superlattices: Diffusion Vs. Dislocation Formation
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- Journal:
- MRS Online Proceedings Library Archive / Volume 103 / 1987
- Published online by Cambridge University Press:
- 25 February 2011, 185
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- 1987
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Hydrogen Passivation of Grain Boundaries in Polycrystalline Silicon Deposited by Molecular Beams
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- Journal:
- MRS Online Proceedings Library Archive / Volume 106 / 1987
- Published online by Cambridge University Press:
- 22 February 2011, 359
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- 1987
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Structural and Electrical Properties of Molecular Beam Deposited Polycrystalline Silicon
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- Journal:
- MRS Online Proceedings Library Archive / Volume 106 / 1987
- Published online by Cambridge University Press:
- 22 February 2011, 83
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- 1987
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