7 results
Al+ implanted vertical 4H-SiC p-i-n diodes: experimental and simulated forward current-voltage characteristics
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- Journal:
- MRS Advances / Volume 1 / Issue 54 / 2016
- Published online by Cambridge University Press:
- 10 May 2016, pp. 3637-3642
- Print publication:
- 2016
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Conventional thermal annealing for a more efficient p-type doping of Al+ implanted 4H-SiC
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- Journal:
- Journal of Materials Research / Volume 28 / Issue 1 / 14 January 2013
- Published online by Cambridge University Press:
- 05 July 2012, pp. 17-22
- Print publication:
- 14 January 2013
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Passivation by N Implantation of the SiO2/SiC Acceptor Interface States: Impact on the Oxide Hole Traps and the Gate Oxide Reliability
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- Journal:
- MRS Online Proceedings Library Archive / Volume 1246 / 2010
- Published online by Cambridge University Press:
- 01 February 2011, 1246-B09-01
- Print publication:
- 2010
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Ion Implanted p+/n 4H-SiC Junctions: effect of the Heating Rate during Post Implantation Annealing
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- Journal:
- MRS Online Proceedings Library Archive / Volume 911 / 2006
- Published online by Cambridge University Press:
- 01 February 2011, 0911-B11-01
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- 2006
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He+ ion damage in 4H-SiC studied by charge collection efficiency measurements.
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- Journal:
- MRS Online Proceedings Library Archive / Volume 792 / 2003
- Published online by Cambridge University Press:
- 01 February 2011, R5.4
- Print publication:
- 2003
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Contact resistivity of Al/Ti ohmic contacts on p-type ion implanted 4H- and 6H-SiC.
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- Journal:
- MRS Online Proceedings Library Archive / Volume 742 / 2002
- Published online by Cambridge University Press:
- 11 February 2011, K6.2
- Print publication:
- 2002
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<0001> channeling stopping power of MeV He+ ions in 4H- and 6H-SiC.
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- Journal:
- MRS Online Proceedings Library Archive / Volume 742 / 2002
- Published online by Cambridge University Press:
- 11 February 2011, K2.12
- Print publication:
- 2002
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