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We show ultra-fast Raman gain dynamics in submicron-size silicon-on-insulator strip waveguide. Using high confinement structures and pico-second pump pulses, we show 6-dB net nonlinear gain with 20.7-W peak pump power in a 7-mm long waveguide.
We propose a novel high-index-contrast waveguide structure capable of light strong confinement and guiding in low-refractive-index materials. The principle of operation of this structure relies on the electric field (E-field) discontinuity at the interface between high-index-contrast materials. We show that by using such a structure the E-field can be strongly confined in a 50-nm-wide low-index region with normalized average intensity of 20 μm−2. This intensity is approximately 20 times higher than that can be achieved in SiO2 with conventional rectangular or photonic crystal waveguides.
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