3 results
Electrically controllable position-controlled color centers created in SiC pn junction diode by proton beam writing
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- Journal:
- Journal of Materials Research / Volume 33 / Issue 20 / 29 October 2018
- Published online by Cambridge University Press:
- 04 September 2018, pp. 3355-3361
- Print publication:
- 29 October 2018
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Reduction in Background Carrier Concentration for 4H-SiC C-face Epitaxial Growth
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- Journal:
- MRS Advances / Volume 1 / Issue 54 / 2016
- Published online by Cambridge University Press:
- 10 May 2016, pp. 3631-3636
- Print publication:
- 2016
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Influence of Growth Conditions and Substrate Properties on Formation of Interfacial Dislocations and Dislocation Half-loop Arrays in 4H-SiC(0001) and (000-1) Epitaxy
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- Journal:
- MRS Online Proceedings Library Archive / Volume 1069 / 2008
- Published online by Cambridge University Press:
- 01 February 2011, 1069-D04-03
- Print publication:
- 2008
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