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Influence of Growth Conditions and Substrate Properties on Formation of Interfacial Dislocations and Dislocation Half-loop Arrays in 4H-SiC(0001) and (000-1) Epitaxy

  • Hidekazu Tsuchida (a1), Isaho Kamata (a2), Kazutoshi Kojima (a3), Kenji Momose (a4), Michiya Odawara (a5), Tetsuo Takahashi (a6), Yuuki Ishida (a7) and Keiichi Matsuzawa (a8)...

Abstract

Formation of interfacial dislocations (IDs) and dislocation half-loop arrays (HLAs) and their appearance in 4H-SiC epi-wafers are investigated by X-ray topography and KOH etching analysis. Synchrotron reflection X-ray topography demonstrates the ability to image IDs and HLAs simultaneously and reveal their densities as well as spatial distributions in the epi-wafers. The vertical location of IDs in the epi-wafer is also examined by this technique. The influence of wafer warp, in-situ H2 etching prior to epitaxial growth, substrate off-angle as well as the growth face (Si-face and C-face) on the densities and spatial distributions of IDs and HLAs are discussed.

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Keywords

Influence of Growth Conditions and Substrate Properties on Formation of Interfacial Dislocations and Dislocation Half-loop Arrays in 4H-SiC(0001) and (000-1) Epitaxy

  • Hidekazu Tsuchida (a1), Isaho Kamata (a2), Kazutoshi Kojima (a3), Kenji Momose (a4), Michiya Odawara (a5), Tetsuo Takahashi (a6), Yuuki Ishida (a7) and Keiichi Matsuzawa (a8)...

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