An apparatus developed recently at Colorado State University utilizes a diffractionlimited optics system and a high-resolution translation system to measure the laser-induced photocurrent at resolutions of 1 μm and equivalent incident laser intensities of 1 sun (100 mW/cm2). Multiple lasers in the 635-830 nm range can be easily selected by changing the fiberoptic connectors. The spot profile and location are unchanged when different lasers are selected. In addition, a laser temperature tuned through the 825-857 nm range allows measurement of local variations in the quantum efficiency near the CdTe band gap, which track intermixing of CdS/CdTe. This capability extends the previous analysis, which includes the separation of series resistance and shunting effects. The effect of post-deposition processing and elevated temperature stress on local variations in electrical and optical parameters, especially using the near-bandgap wavelengths, are examined using a series of samples fabricated at NREL.