5 results
An Advanced High-k Transistor Utilizing Metal-Organic Precursors in an ALD Deposition of Hafnium Oxide and Hafnium Silicate with Ozone as Oxidizer
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- Journal:
- MRS Online Proceedings Library Archive / Volume 811 / 2004
- Published online by Cambridge University Press:
- 28 July 2011, D2.4
- Print publication:
- 2004
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Hall effect measurements at low temperature of arsenic implanted into 4H-silicon carbide
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- Journal:
- MRS Online Proceedings Library Archive / Volume 622 / 2000
- Published online by Cambridge University Press:
- 15 March 2011, T6.7.1
- Print publication:
- 2000
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Temperature dependences of channel mobility and threshold voltage in 4H- and 6H-SiC MOSFETs
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- Journal:
- MRS Online Proceedings Library Archive / Volume 640 / 2000
- Published online by Cambridge University Press:
- 21 March 2011, H.37
- Print publication:
- 2000
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MOCVD of High-K Dielectrics and Conductive Metal Nitride Thin Films
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- Journal:
- MRS Online Proceedings Library Archive / Volume 606 / 1999
- Published online by Cambridge University Press:
- 10 February 2011, 13
- Print publication:
- 1999
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Electrical Properties of Fully Epitaxial PZT/MgO/Si Stacked Structures for Nonvolatile Future Memory Devices
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- Journal:
- MRS Online Proceedings Library Archive / Volume 541 / 1998
- Published online by Cambridge University Press:
- 10 February 2011, 591
- Print publication:
- 1998
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