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MOCVD of High-K Dielectrics and Conductive Metal Nitride Thin Films

Published online by Cambridge University Press:  10 February 2011

Yoshihide Senzaki ,
Richard F. Hamilton ,
Kimberly G. Reid ,
Christopher C. Hobbs ,
Rama I. Hegdec  and
Mike J. Tinerc
Yoshihide Senzaki
Affiliation:
Schumacher, Carlsbad, California, 92009 (e-mail: senzaky@apci.com)
Richard F. Hamilton
Affiliation:
Air Products and Chemicals, Inc., Allentown, Pennsylvania, 18195
Kimberly G. Reid
Affiliation:
Motorola, Austin, Texas, 78721
Christopher C. Hobbs
Affiliation:
Motorola, Austin, Texas, 78721
Rama I. Hegdec
Affiliation:
Motorola, Austin, Texas, 78721
Mike J. Tinerc
Affiliation:
Motorola, Austin, Texas, 78721
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Abstract

A known liquid mixture of [(CH3CH2)2N]3 Ta=NCH2CH3 and [(CH3CH2)2N]3Ta[ð2-CH3CH2N=CH(CH3)] was studied to deposit Ta2O5 and TaN thin films by CVD. Films were deposited at temperatures below 400°C using oxygen for oxide and ammonia for nitride, respectively. XRD analysis revealed that as-deposited amorphous tantalum oxide films were converted to hexagonal Ta2O5 after annealing under oxygen, while tantalum nitride thin films contained cubic TaN as deposited. The low viscosity, thermal stability, and sufficient volatility of the precursor allows direct liquid injection to deliver the precursor, which results in high deposition rate and uniformity of the deposited films.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 606: Symposium NN – Chemical Processing of Dielectrics, Insulators & Electronic Ceramics , 1999 , 13
Copyright
Copyright © Materials Research Society 2000

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