6 results
A low-phase noise D-band signal source based on 130 nm SiGe BiCMOS and 0.15 µm AlGaN/GaN HEMT technologies
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- Journal:
- International Journal of Microwave and Wireless Technologies / Volume 11 / Issue 5-6 / June 2019
- Published online by Cambridge University Press:
- 25 March 2019, pp. 456-465
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Multi-functional D-band I/Q modulator/demodulator MMICs in SiGe BiCMOS technology
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- Journal:
- International Journal of Microwave and Wireless Technologies / Volume 10 / Issue 5-6 / June 2018
- Published online by Cambridge University Press:
- 03 April 2018, pp. 596-604
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Generic Graphene Based Components and Circuits for Millimeter Wave High Data-rate Communication Systems
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- Journal:
- MRS Advances / Volume 2 / Issue 58-59 / 2017
- Published online by Cambridge University Press:
- 19 June 2017, pp. 3559-3564
- Print publication:
- 2017
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Noise performance comparison between two different types of time-domain systems for microwave detection
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- Journal:
- International Journal of Microwave and Wireless Technologies / Volume 9 / Issue 3 / April 2017
- Published online by Cambridge University Press:
- 27 April 2016, pp. 535-542
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A highly efficient 3.5 GHz inverse class-F GaN HEMT power amplifier
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- Journal:
- International Journal of Microwave and Wireless Technologies / Volume 2 / Issue 3-4 / August 2010
- Published online by Cambridge University Press:
- 11 June 2010, pp. 317-324
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Design and evaluation of 20-GHz power amplifiers in 130-nm CMOS
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- Journal:
- International Journal of Microwave and Wireless Technologies / Volume 1 / Issue 4 / August 2009
- Published online by Cambridge University Press:
- 19 June 2009, pp. 301-307
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