Transparent and conductive mixtures of ITO-ZnO and ITO-ZnO:Al have been deposited by a combinatorial pulsed laser deposition on Si and quartz substrates. Measurements of the In to Zn ratios along the transversal axis of the substrates were performed using energy dispersive x-ray spectroscopy. From simulations of the x-ray reflectivity spectra, collected with a 2 mm mask on different locations along the transversal axis of the samples, the density and thickness of the deposited films were calculated and then the In to Zn ratios. The crystalline structure and electrical properties of the deposited films were also investigated along the same axis. Changes in the ratio of In/Zn along this axis resulted in changes of the lattice constant, texture, optical and electrical properties of the films. By changing the In to Zn ration we could tailor the properties of the transparent electrode and found ways to partially replace the more expensive ITO material with ZnO.