11 results
High growth rate 3C-SiC growth: from hetero-epitaxy to homo-epitaxy
-
- Journal:
- MRS Advances / Volume 1 / Issue 54 / 2016
- Published online by Cambridge University Press:
- 10 May 2016, pp. 3643-3647
- Print publication:
- 2016
-
- Article
- Export citation
Optimization of Ion Implantation processes for 4H-SiC DIMOSFET
-
- Journal:
- MRS Advances / Volume 1 / Issue 55 / 2016
- Published online by Cambridge University Press:
- 18 May 2016, pp. 3673-3678
- Print publication:
- 2016
-
- Article
- Export citation
High performance SiC detectors for MeV ion beams generated by intense pulsed laser plasmas
-
- Journal:
- Journal of Materials Research / Volume 28 / Issue 1 / 14 January 2013
- Published online by Cambridge University Press:
- 05 July 2012, pp. 87-93
- Print publication:
- 14 January 2013
-
- Article
- Export citation
Effects of a Ta Interlayer on the Titanium Silicide Reaction: C40 Formation and Higher Scalability of the TiSi2 Process.
-
- Journal:
- MRS Online Proceedings Library Archive / Volume 670 / 2001
- Published online by Cambridge University Press:
- 21 March 2011, K6.3
- Print publication:
- 2001
-
- Article
- Export citation
Structural and Electrical Characterisation of Nickel Silicides Contacts on Silicon Carbide
-
- Journal:
- MRS Online Proceedings Library Archive / Volume 680 / 2001
- Published online by Cambridge University Press:
- 21 March 2011, E6.9
- Print publication:
- 2001
-
- Article
- Export citation
Effect of a thin Ta layer on the C49-C54 transition.
-
- Journal:
- MRS Online Proceedings Library Archive / Volume 611 / 2000
- Published online by Cambridge University Press:
- 14 March 2011, C7.10.1
- Print publication:
- 2000
-
- Article
- Export citation
Estimation of The Critical Radius for The Nucleation of the C54 Phase in C49 TiSi2: Role of The Difference in Density
-
- Journal:
- MRS Online Proceedings Library Archive / Volume 580 / 1999
- Published online by Cambridge University Press:
- 15 February 2011, 129
- Print publication:
- 1999
-
- Article
- Export citation
Kinetics of the C49-C54 transformation in patterned and blanket TiSi2 films: a comparison.
-
- Journal:
- MRS Online Proceedings Library Archive / Volume 514 / 1998
- Published online by Cambridge University Press:
- 10 February 2011, 219
- Print publication:
- 1998
-
- Article
- Export citation
Effect of lateral dimension scaling on thermal stability of thin CoSi2 layers on polysilicon implanted with Si
-
- Journal:
- MRS Online Proceedings Library Archive / Volume 514 / 1998
- Published online by Cambridge University Press:
- 10 February 2011, 381
- Print publication:
- 1998
-
- Article
- Export citation
Electrical Characterization of Ultra-Shallow Junctions Formed by Diffusion From a CoSi2 Diffusion Source
-
- Journal:
- MRS Online Proceedings Library Archive / Volume 427 / 1996
- Published online by Cambridge University Press:
- 15 February 2011, 493
- Print publication:
- 1996
-
- Article
- Export citation
Titanium Silicidation and Secondary Defect Annihilation in ION Beam Processed Sige Layers
-
- Journal:
- MRS Online Proceedings Library Archive / Volume 402 / 1995
- Published online by Cambridge University Press:
- 15 February 2011, 149
- Print publication:
- 1995
-
- Article
- Export citation