6 results
Damage and Dopant Profiles Produced by Ultra-Shallow Boron And Arsenic Ion Implants into Silicon at Different Temperatures Characterised by Medium Energy Ion Scattering.
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- Journal:
- MRS Online Proceedings Library Archive / Volume 717 / 2002
- Published online by Cambridge University Press:
- 01 February 2011, C7.8
- Print publication:
- 2002
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Profile Changes and Self-sputtering during Low Energy Ion Implantation.
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- Journal:
- MRS Online Proceedings Library Archive / Volume 717 / 2002
- Published online by Cambridge University Press:
- 01 February 2011, C7.2
- Print publication:
- 2002
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Practical Aspects of Forming Ultra-Shallow Junctions by Sub-keV Boron Implants
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- Journal:
- MRS Online Proceedings Library Archive / Volume 568 / 1999
- Published online by Cambridge University Press:
- 10 February 2011, 55
- Print publication:
- 1999
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Characterisation of Low Energy Boron Implantation and Fast Ramp-Up Rapid Thermal Annealing
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- Journal:
- MRS Online Proceedings Library Archive / Volume 525 / 1998
- Published online by Cambridge University Press:
- 10 February 2011, 227
- Print publication:
- 1998
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Low Energy Implantation and Transient Enhanced Diffusion: Physical Mechanisms and Technology Implications
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- Journal:
- MRS Online Proceedings Library Archive / Volume 469 / 1997
- Published online by Cambridge University Press:
- 15 February 2011, 265
- Print publication:
- 1997
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Low Energy Ion Implantation of as During Si-MBE
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- Journal:
- MRS Online Proceedings Library Archive / Volume 378 / 1995
- Published online by Cambridge University Press:
- 26 February 2011, 115
- Print publication:
- 1995
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