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Low Energy Ion Implantation of as During Si-MBE

  • E. J. H. Collart (a1), D. J. Gravesteijn (a1), E. G. C. Lathouwers (a1) and W. J. Kersten (a1)

Abstract

As-doped Si layers were grown using Molecular Beam Epitaxy (MBE) together with simultaneous Low Energy Ion Implantation (LEII). The influence of growth conditions such as Si-substrate temperature, ion energy and ion dose was investigated using structural and electrical characterization techniques. Below the As solid solubility limit, well defined and 100 % electrically active As-doped layers were grown. Above solid solubility segregation occured, with broadened profiles and less than 100 % activation.

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