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This report will demonstrate broadband, wide-angle, and polarization-insensitive absorption enhancement in ultra-thin films resting on metal substrates that have been etched with arrays of shallow sub-wavelength cylindrical holes. Absorption enhancement will be studied as a function of array geometry, with particular emphasis given to quasiperiodic arrays (a class of deterministic aperiodic arrays that were originally developed to tessellate 2-D planes with regular polygons). Through simulations and experimental data, it was found that absorption enhancement is heavily dependent on the rotational symmetry of the pattern of holes, as well as the inter-hole distance.
The enhancement of the Er3+ ions photoluminescence (PL) emission at 1.54 μm in a Si and Er co-implanted aluminosilicate glass is investigated in details. Post-implantation annealing has been performed to recover the damage induced by the implantation process and to promote Si aggregation. It is shown that 1h treatment in N2 atmosphere is not sufficient to induce Si precipitation for the investigated temperatures, up to 500°C. Nevertheless, the most intense Er3+ PL emission at 1.54 μm is achieved at 400°C. Such emission has been investigated by pumping in and out of resonance. The results suggest that good energy transfer mediators could be small Si aggregates and not only crystalline clusters. The effective excitation cross section of Er3+ ions has been measured in the best performing sample yielding a value of ∼ 2 × 10−16 cm2, many orders of magnitude higher than the direct absorption cross section of Er3+ ions: about 10−21 cm2 in this glass. The structural and optical properties of this material are discussed and compared to those found for a standard silica substrate.
In the present work, a quantitative understanding of the Er-doped Si nanocrystals interaction is reported. We present a model based on an energy level scheme taking into account the coupling between each Si nanocrystal and the neighboring Er ions. By fitting the steady state and time resolved luminescence signals at both the 1.54 and 0.98 μm Er lines we were able to determine a value of 3×10-15 cm3 s-1 for the coupling coefficient. Moreover, a strong cooperative up-conversion mechanism, active between two excited Er ions and characterized by a coefficient of 7×10-17 cm3 s-1, will be shown to be active in the system, demonstrating that each Si nanocrystal can actually excite more than one Er ion.
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