10 results
Low Temperature Selective Si Epitaxy Using Si2H6 and Cl2: Investigations into Selectivity Robustness and Epitaxial Film Quality
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- Journal:
- MRS Online Proceedings Library Archive / Volume 429 / 1996
- Published online by Cambridge University Press:
- 10 February 2011, 355
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- 1996
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Low Temperature Selective Silicon Epitaxy Using Si2H6, H2 and Cl2 in Ultra High Vacuum Rapid Thermal Chemical Vapor Deposition
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- Journal:
- MRS Online Proceedings Library Archive / Volume 387 / 1995
- Published online by Cambridge University Press:
- 15 February 2011, 335
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- 1995
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Characterization of MOS Devices Fabricated on Carbon Implanted Silicon Substrates
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- Journal:
- MRS Online Proceedings Library Archive / Volume 378 / 1995
- Published online by Cambridge University Press:
- 26 February 2011, 737
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- 1995
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Nucleation and Growth of Polycrystalline Silicon Films in an Ultra high Vacuum Rapid Thermal Chemical Vapor Deposition Reactor Using Disilane and Hydrogen
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- Journal:
- MRS Online Proceedings Library Archive / Volume 343 / 1994
- Published online by Cambridge University Press:
- 15 February 2011, 673
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- 1994
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Characterization of Oxygen-Doped and Non-Oxygen-Doped Polysilicon Films Prepared by Rapid Thermal Chemical Vapor Deposition
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- Journal:
- MRS Online Proceedings Library Archive / Volume 303 / 1993
- Published online by Cambridge University Press:
- 21 February 2011, 49
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- 1993
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Stability of Ultra-Thin Gate Oxides with Boron Doped Polysilicon Gate Structures After Rapid Thermal Annealing
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- Journal:
- MRS Online Proceedings Library Archive / Volume 303 / 1993
- Published online by Cambridge University Press:
- 21 February 2011, 247
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- 1993
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Selective Removal of Silicon-Germanium: Chemical and Reactive Ion Etching
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- Journal:
- MRS Online Proceedings Library Archive / Volume 298 / 1993
- Published online by Cambridge University Press:
- 25 February 2011, 157
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- 1993
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Cleaning during Initial Stages of Epitaxial Growth in an Ultrahigh Vacuum Rapid Thermal Chemical Vapor Deposition Reactor
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- Journal:
- MRS Online Proceedings Library Archive / Volume 334 / 1993
- Published online by Cambridge University Press:
- 22 February 2011, 463
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- 1993
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Silicon Nucleation on Silicon Dioxide and Selective Epitaxy In An Ultra-High Vacuum Raptid Thermal Chemical Vapor Deposition Reactor Using Disilane In Hydrogen
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- Journal:
- MRS Online Proceedings Library Archive / Volume 334 / 1993
- Published online by Cambridge University Press:
- 22 February 2011, 519
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- 1993
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Self-Aligned Formation of C54 Titanium Germanosilicide Using Rapid Thermal Processing and Application to Raised, Ultrashallow Junctions
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- Journal:
- MRS Online Proceedings Library Archive / Volume 320 / 1993
- Published online by Cambridge University Press:
- 03 September 2012, 311
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- 1993
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