Rapid thermal annealing (RTA) techniques have been developed to activate shallow, high dose implants in InGaAs. Activation of deep, multiple energy high dose beryllium implants was also investigated. Two-step RTA cycles which peaked at a high temperature momentarily and then held at a lower temperature for 3 to 10 seconds were used to activate the implanted dopants. Over 80% activation was achieved. The results are superior to furnace anneal results, and at least comparable to graphite strip heater results. Increasing the anneal temperature on higher dose implants, however, type conversion was observed when the peak temperature exceeded a certain value.