We present the results of a study we have done to explore the effects of high levels of Be dopant, >1×1019 /cm3, in GaAs/AlGaAs superlattice structures. The materials were grown using Molecular Beam Epitaxy (MBE) at 680 C using standard growth conditions. The samples were studied using a variety of structural, optical and electrical probes. Structural data obtained from Auger and SIMS profiling is presented as well as optical data from photoluminescence and Raman scattering. We also present the results of electrochemical profiling of the samples. The results of these studies provide evidence of intermixing of the superlattice during growth with sufficiently high Be levels. We have found evidence for a concentration threshold in the diffusivity of Be in these structures. We also find that the dominant mechanism for Be redistribution in these samples appears to be diffusive in nature rather than due to surface riding.