We have been investigated p- and n-type microcrystalline Si1-xCx (μc-SiC) films fabricated by a conventional rf (13.56 MHz) plasma CVD method with a use of a new carbon source of C2H6 gas at a low substrate temperature on a glass substrate. The Si crystallites incorporated in μc-SiC films retain with a carbon content up to 9 at.%. Both of p- and n-type μc-SiC films show relative high dark conductivities of on the order of 10-3 S/cm with optical energy gaps, E04, of~2eV. In infrared spectra, any pronounced features due to C-Hn vibration mode are not found in C2H6-based μc-SiC films, which is different from the case of CH4-based μc-SiC films.