4 results
Base Transit Time in Abrupt GaN/InGaN/GaN and AlGaN/GaN/AlGaN HBTs
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- Journal:
- Materials Research Society Internet Journal of Nitride Semiconductor Research / Volume 4 / Issue S1 / 1999
- Published online by Cambridge University Press:
- 13 June 2014, pp. 576-581
- Print publication:
- 1999
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- Article
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Physics-Based Intrinsic Model for AlGaN/GaN HEMTs
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- Journal:
- Materials Research Society Internet Journal of Nitride Semiconductor Research / Volume 4 / Issue S1 / 1999
- Published online by Cambridge University Press:
- 13 June 2014, pp. 775-780
- Print publication:
- 1999
-
- Article
-
- You have access
- HTML
- Export citation
Base Transit Time in Abrupt GaN/InGaN/GaN and AlGaN/GaN/AlGaN HBTs
-
- Journal:
- MRS Online Proceedings Library Archive / Volume 537 / 1998
- Published online by Cambridge University Press:
- 15 February 2011, G6.7
- Print publication:
- 1998
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- Article
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Physics-Based Intrinsic Model for AlGaN/GaN HEMTs
-
- Journal:
- MRS Online Proceedings Library Archive / Volume 537 / 1998
- Published online by Cambridge University Press:
- 15 February 2011, G6.58
- Print publication:
- 1998
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- Article
- Export citation