7 results
Long-Term Characterization of 6H-SiC Transistor Integrated Circuit Technology Operating at 500 °C
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- Journal:
- MRS Online Proceedings Library Archive / Volume 1069 / 2008
- Published online by Cambridge University Press:
- 01 February 2011, 1069-D11-02
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- 2008
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Process-Induced Deformations and Stacking Faults in 4H-SiC
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- Journal:
- MRS Online Proceedings Library Archive / Volume 911 / 2006
- Published online by Cambridge University Press:
- 01 February 2011, 0911-B07-02
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- 2006
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Thermoplastic Deformation and Residual Stress Topography of 4H-SiC Wafers
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- Journal:
- MRS Online Proceedings Library Archive / Volume 815 / 2004
- Published online by Cambridge University Press:
- 15 March 2011, J6.2
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- 2004
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Characterization of SiC epilayers using high-resolution X-ray diffraction and synchrotron topography imaging
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- Journal:
- MRS Online Proceedings Library Archive / Volume 815 / 2004
- Published online by Cambridge University Press:
- 15 March 2011, J7.3
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- 2004
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Material System for Packaging 500°C SiC Microsystems
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- Journal:
- MRS Online Proceedings Library Archive / Volume 682 / 2001
- Published online by Cambridge University Press:
- 21 March 2011, N4.3
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- 2001
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Stable Ti/TaSi2/Pt Ohmic Contacts on N-Type 6H-SiC Epilayer at 600°C in Air
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- Journal:
- MRS Online Proceedings Library Archive / Volume 622 / 2000
- Published online by Cambridge University Press:
- 15 March 2011, T8.3.1
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- 2000
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Reaction Kinetics of Thermally Stable Contact Metallization on 6H-SiC
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- Journal:
- MRS Online Proceedings Library Archive / Volume 640 / 2000
- Published online by Cambridge University Press:
- 21 March 2011, H7.5
- Print publication:
- 2000
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