Enhanced dopant diffusion during RTA depends upon whether the following
physical phenomena occur individually or in combination: (1) amorphization
of the Si, (2) damage-induced dislocation formation, (3) damage annealing,
(4) self-interstitial trapping, (5) solubility enhancement. RTA of B in
crystalline or preamorphized Si presents significantly different
environments for enhanced diffusion. In preamorphized Si, enhanced B
diffusion is modeled as increased B solubility following SPE. In addition, a
different intrinsic diffusivity is observed which corresponds to B diffusion
in preamorphized Si. Anomalous diffusion of B and As from high dose implants
can be modeled with the same mechanism -- self-interstitial trapping
following SPE.