5 results
Plastic relaxation through buried cracks in AlGaN/GaN heterostructures
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- Journal:
- The European Physical Journal - Applied Physics / Volume 27 / Issue 1-3 / July 2004
- Published online by Cambridge University Press:
- 15 July 2004, pp. 263-265
- Print publication:
- July 2004
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Pyramidal defects in highly Mg-doped GaN: atomic structure and influence on optoelectronic properties
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- Journal:
- The European Physical Journal - Applied Physics / Volume 27 / Issue 1-3 / July 2004
- Published online by Cambridge University Press:
- 15 July 2004, pp. 259-262
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- July 2004
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Influence of the Mg precursor on the incorporation of Mg in MOVPE grown GaN.
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- Journal:
- Materials Research Society Internet Journal of Nitride Semiconductor Research / Volume 5 / Issue 1 / 2000
- Published online by Cambridge University Press:
- 13 June 2014, e8
- Print publication:
- 2000
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Hydrogen Diffusion in N-Type Silicon.Comparison With P-Type Silicon
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- Journal:
- MRS Online Proceedings Library Archive / Volume 209 / 1990
- Published online by Cambridge University Press:
- 26 February 2011, 573
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- 1990
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Modeling of the Diffusion of Hydrogen in Silicon
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- Journal:
- MRS Online Proceedings Library Archive / Volume 163 / 1989
- Published online by Cambridge University Press:
- 25 February 2011, 401
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- 1989
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