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Plastic relaxation through buried cracks in AlGaN/GaN heterostructures

Published online by Cambridge University Press:  15 July 2004

J.-M. Bethoux ,
P. Vennéguès ,
M. Laügt  and
P. De Mierry
J.-M. Bethoux*
Affiliation:
Centre de Recherche sur l'Hétéro-Épitaxie et ses Applications, CNRS rue Bernard Grégory, Sophia Antipolis, 06560 Valbonne, France
P. Vennéguès
Affiliation:
Centre de Recherche sur l'Hétéro-Épitaxie et ses Applications, CNRS rue Bernard Grégory, Sophia Antipolis, 06560 Valbonne, France
M. Laügt
Affiliation:
Centre de Recherche sur l'Hétéro-Épitaxie et ses Applications, CNRS rue Bernard Grégory, Sophia Antipolis, 06560 Valbonne, France
P. De Mierry
Affiliation:
Centre de Recherche sur l'Hétéro-Épitaxie et ses Applications, CNRS rue Bernard Grégory, Sophia Antipolis, 06560 Valbonne, France
*
Jean.Marc.Bethoux@crhea.cnrs.fr
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Abstract

Due to high lattice mismatch, heterostructures of III-nitrides are subject to plastic relaxation. In this paper, we focus on the relaxation of AlGaN films grown on GaN. This relaxation is realised by cracking followed by the introduction of misfit dislocations. We describe those mechanisms and present a method to grow thick high quality crack-free AlGaN layers. This method uses jointly plastic relaxation and lateral growth.

Keywords

Type
Research Article
Information
The European Physical Journal - Applied Physics , Volume 27 , Issue 1-3: Tenth International Conference on Defects: Recognition, Imaging and Physics in Semiconductors (DRIP X) , July 2004 , pp. 263 - 265
Copyright
© EDP Sciences, 2004

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