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Modeling of the Diffusion of Hydrogen in Silicon

Published online by Cambridge University Press:  25 February 2011

D. Mathiot ,
D. Ballutaud ,
P. De Mierry  and
M. Aucouturier
D. Mathiot
Affiliation:
CNET-CNS, BP. 98, 38243 Meylan Cédex, France
D. Ballutaud
Affiliation:
Laboratoire Physique des Solides, CNRS, 1, place A. Briand, 92135 Meudon Principal, France
P. De Mierry
Affiliation:
Laboratoire Physique des Solides, CNRS, 1, place A. Briand, 92135 Meudon Principal, France
M. Aucouturier
Affiliation:
Laboratoire Physique des Solides, CNRS, 1, place A. Briand, 92135 Meudon Principal, France
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Abstract

A model is proposed to describe hydrogen motion in silicon near 150°C. This model leads to a consistent view of H° behaviour in low doped n and p-type Si, with a diffusivity in agreement with the high temperature data. On the other hand, a systematic variation of DH+ with the boron concentration forces us to conclude that some still unknown interactions take place and contribute to hydrogen trapping in highly doped p-Si.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 163: Symposium G – Impurities, Defects and Diffusion in Semiconductors: Bulk and Layered Structures , 1989 , 401
Copyright
Copyright © Materials Research Society 1990

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