The first experimental results about the growth and
characterization of Pb1−xCdxTe new high-Z
ternary alloy, grown by Vapour Phase Epitaxy (VPE) onto CdTe
single crystal substrates are presented. SEM images have shown a
well-defined interface between the substrate and the
heterostructure bulk, without voids or inclusions. EDX analysis
in a line scan mode was done over the layer crossections. The Te,
Pb and Cd concentration profiles were found, verifying a strong
inter-diffusion in the metallic sublattices and confirming the
existence of the Pb1−xCdxTe ternary alloy.
This has been also confirmed by X-ray diffraction measurements.
For the longest growth times, two types of surface defects arose:
PbTe aligned microcrystals and cylindrical-like Te-rich structures.
Hall measurements showed that the carrier concentration of the
layers decreases and the resistivity increases when the growth
temperature increases. The influence of the surface defects on the
electrical properties was also demonstrated.