5 results
Calculation of solid–liquid interfacial free energy of silicon based on classical nucleation theory
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- Journal:
- Journal of Materials Research / Volume 31 / Issue 23 / 14 December 2016
- Published online by Cambridge University Press:
- 05 December 2016, pp. 3649-3656
- Print publication:
- 14 December 2016
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High-Quality AlGaN/GaN Grown on Sapphire by Gas-Source Molecular Beam Epitaxy using a Thin Low-Temperature AlN Layer
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- Journal:
- Materials Research Society Internet Journal of Nitride Semiconductor Research / Volume 5 / Issue S1 / 2000
- Published online by Cambridge University Press:
- 13 June 2014, pp. 459-466
- Print publication:
- 2000
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- Article
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Characterization of InGaN Quantum Wells Grown by Molecular Beam Epitaxy (MBE) Using Ammonia as the Nitrogen Source
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- Journal:
- MRS Online Proceedings Library Archive / Volume 595 / 1999
- Published online by Cambridge University Press:
- 03 September 2012, F99W11.37
- Print publication:
- 1999
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High-Quality AlGaN/GaN Grown on Sapphire by Gas-Source Molecular Beam Epitaxy using a Thin Low-Temperature AlN Layer
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- Journal:
- MRS Online Proceedings Library Archive / Volume 595 / 1999
- Published online by Cambridge University Press:
- 03 September 2012, F99W8.1
- Print publication:
- 1999
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P-type Mg-doped GaN grown by molecular beam epitaxy using ammonia as the nitrogen source
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- Journal:
- MRS Online Proceedings Library Archive / Volume 395 / 1995
- Published online by Cambridge University Press:
- 21 February 2011, 169
- Print publication:
- 1995
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