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A New Post Annealing Method for AlGaN/GaN Heterostructure Field-Effect Transistors Employing XeCl Excimer Laser Pulses
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- Journal:
- MRS Online Proceedings Library Archive / Volume 864 / 2005
- Published online by Cambridge University Press:
- 01 February 2011, E9.2
- Print publication:
- 2005
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- Article
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Low Ohmic Contact Resistance of GaN by Employing XeCl Excimer Laser
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- Journal:
- MRS Online Proceedings Library Archive / Volume 764 / 2003
- Published online by Cambridge University Press:
- 01 February 2011, C3.52
- Print publication:
- 2003
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- Article
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