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Epitaxial silicon carbide simulations vs. experiments: etching, growth rates and aluminum/nitrogen doping
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- Journal:
- MRS Online Proceedings Library Archive / Volume 742 / 2002
- Published online by Cambridge University Press:
- 11 February 2011, K1.4
- Print publication:
- 2002
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Heat and mass transfer modeling for a better knowledge of the large-area growth of homoepitaxial SiC by CVD
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- Journal:
- MRS Online Proceedings Library Archive / Volume 640 / 2000
- Published online by Cambridge University Press:
- 21 March 2011, H5.6
- Print publication:
- 2000
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