Recombination processes in GaAsN, GaInAsN, and GaAsSbN compounds
have been analysed and compared. The following properties like:
broad photoluminescence band at energy of ~ 0.85 eV, an
emission band aproximately 80 meV below band gap energy, and
annealing-induced blue shift of the energy gap have been found
for all three compounds. In order to explain these features a
simple band gap diagram with N defect-related levels close to
conduction band edge and fluctuations in the energy of the conduction
band minimum has been proposed.